Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors-Reference-Cited by-同舟云学术

Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors

Published:2018-04-02 Issue:21 Volume:30 Page:1705934
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Guo Jian¹,Liu Yuan¹,Ma Yue¹,Zhu Enbo¹,Lee Shannon¹²,Lu Zixuan¹,Zhao Zipeng¹,Xu Changhao¹,Lee Sung‐Joon¹,Wu Hao¹,Kovnir Kirill²,Huang Yu¹,Duan Xiangfeng³^ORCID

Affiliation:

1. Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA

2. Department of Chemistry Iowa State University, and Ames Laboratory Ames IA 50011 USA

3. Department of Chemistry and Biochemistry University of California Los Angeles CA 90095 USA

Funder

Office of Naval Research

National Science Foundation

U.S. Department of Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201705934

Reference38 articles.

1. Two-dimensional semiconductors with possible high room temperature mobility

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4. Single-layer MoS2 transistors

5. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

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