Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires-Reference-Cited by-同舟云学术

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Published:2020-01-23 Issue:2 Volume:14 Page:2445-2455
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Assali Simone¹²^ORCID,Bergamaschini Roberto³^ORCID,Scalise Emilio³^ORCID,Verheijen Marcel A.⁴,Albani Marco³^ORCID,Dijkstra Alain¹^ORCID,Li Ang¹⁵,Koelling Sebastian¹^ORCID,Bakkers Erik P. A. M.¹⁶^ORCID,Montalenti Francesco³^ORCID,Miglio Leo³^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

2. Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada

3. L-NESS and Department of Materials Science, University of Milano Bicocca, 20125, Milano, Italy

4. Eurofins Materials Science BV, High Tech Campus 11, 5656AE Eindhoven, The Netherlands

5. Beijing University of Technology, Pingleyuan 100, Beijing 100124, People’s Republic of China

6. Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands

Funder

Stichting voor de Technische Wetenschappen

Philips

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b09929

Reference42 articles.

1. Mid-infrared photonics in silicon and germanium

2. Direct Bandgap Group IV Epitaxy on Si for Laser Applications

3. Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

4. Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers

5. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission

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