Direct Writing of Aligned Carbon Nanotubes across a Trench-Reference-Cited by-同舟云学术

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Direct Writing of Aligned Carbon Nanotubes across a Trench

Published:2023-11-15 Issue:22 Volume:17 Page:22701-22707
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Barnes Benjamin¹²^ORCID,Wang Ziyi¹,Alibrahim Ayman¹,Lin Qinglin¹,Wu Xiaojian¹,Wang YuHuang¹³^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, United States

2. Department of Material Science and Engineering, University of Maryland, College Park, Maryland 20742, United States

3. Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, United States

Funder

National Institute of General Medical Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c07191

Reference30 articles.

1. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

2. Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

3. Carbon nanotube transistors scaled to a 40-nanometer footprint

4. Parallel Field-Effect Nanosensors Detect Trace Biomarkers Rapidly at Physiological High-Ionic-Strength Conditions

5. Directed and On-Demand Alignment of Carbon Nanotube: A Review toward 3D Printing of Electronics

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