Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs-Reference-Cited by-同舟云学术

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Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Published:2016-09-02 Issue:9 Volume:2 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Brady Gerald J.¹,Way Austin J.¹,Safron Nathaniel S.¹,Evensen Harold T.²^ORCID,Gopalan Padma¹,Arnold Michael S.¹

Affiliation:

1. Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI 53706, USA.

2. Department of Engineering Physics, University of Wisconsin-Platteville, 1 University Plaza, Platteville, WI 53818, USA.

Abstract

Nearly ballistic carbon nanotube array transistors are realized with current densities outmatching conventional semiconductors.

Funder

National Science Foundation

U.S. Air Force

U.S. Army

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference74 articles.

1. Sub-10 nm Carbon Nanotube Transistor

2. A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime—Part I: Intrinsic elements;Lee C.-S.;IEEE T. Electron. Dev.,2015

3. Compact models and the physics of nanoscale FETs;Lundstrom M. S.;IEEE T. Electron. Dev.,2014

4. Carbon-based electronics;Avouris P.;Nat. Nanotechnol.,2007

5. Ballistic carbon nanotube field-effect transistors;Javey A.;Nature,2003

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