Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Author:

Liu Lijun1ORCID,Han Jie1ORCID,Xu Lin1ORCID,Zhou Jianshuo1,Zhao Chenyi1,Ding Sujuan23,Shi Huiwen1,Xiao Mengmeng1ORCID,Ding Li1,Ma Ze1,Jin Chuanhong23ORCID,Zhang Zhiyong124ORCID,Peng Lian-Mao124ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China.

2. Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China.

3. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

4. Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China.

Abstract

Aligning dense carbon nanotube arrays Although semiconducting carbon nanotubes (CNTs) are promising candidates to replace silicon in transistors at extremely small dimensions, their purity, density, and alignment must be improved. Liu et al. combined a multiple dispersion sorting process, which improves purity, and a dimension-limited self-alignment process to produce well-aligned CNT arrays on a 10-centimeter silicon wafer. The density is sufficiently high (100 to 200 CNTs per micrometer) that large-scale integrated circuits could be fabricated. With ionic liquid gating, the performance metrics exceeded those of conventional silicon transistors with similar dimensions. Science , this issue p. 850

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China Stem Cell and Translational Research

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference59 articles.

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