Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation-Reference-Cited by-同舟云学术

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

Published:2022-09-16 Issue:9 Volume:16 Page:14463-14478
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Vogel Tobias¹^ORCID,Zintler Alexander²,Kaiser Nico¹^ORCID,Guillaume Nicolas³,Lefèvre Gauthier⁴,Lederer Maximilian⁵^ORCID,Serra Anna Lisa³,Piros Eszter¹,Kim Taewook¹,Schreyer Philipp¹,Winkler Robert²,Nasiou Déspina²,Olivo Ricardo Revello⁵,Ali Tarek⁵,Lehninger David⁵,Arzumanov Alexey¹,Charpin-Nicolle Christelle³,Bourgeois Guillaume³,Grenouillet Laurent³,Cyrille Marie-Claire³,Navarro Gabriele³,Seidel Konrad⁵,Kämpfe Thomas⁵^ORCID,Petzold Stefan¹,Trautmann Christina⁶⁷,Molina-Luna Leopoldo²^ORCID,Alff Lambert¹

Affiliation:

1. Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany

2. Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany

3. CEA, LETI, Univ. Grenoble Alpes, 38000 Grenoble, France

4. CNRS-LTM, CEA, LETI, 38054 Grenoble, France

5. Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany

6. GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt, Germany

7. Institute of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany

Funder

Bundesministerium f??r Bildung und Forschung

Deutsche Forschungsgemeinschaft

European Commission

Electronic Components and Systems for European Leadership

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c04841

Reference82 articles.

1. Memory technology—a primer for material scientists

2. A review of emerging non-volatile memory (NVM) technologies and applications

3. Phase-Change Memory: Performance, Roles and Challenges

4. Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

5. Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOxbased Memristive Devices

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