2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope-Reference-Cited by-同舟云学术

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Published:2020-06-12 Issue:7 Volume:14 Page:8605-8615
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Klinkert Cedric¹,Szabó Áron¹,Stieger Christian¹,Campi Davide²^ORCID,Marzari Nicola²^ORCID,Luisier Mathieu¹^ORCID

Affiliation:

1. Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland

2. Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Funder

Eidgen?ssische Technische Hochschule Z?rich

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Partnership for Advanced Computing in Europe AISBL

Swiss National Supercomputing Centre

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c02983

Reference60 articles.

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