Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors-Reference-Cited by-同舟云学术

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

Published:2016-07-01 Issue:7 Volume:10 Page:6659-6666
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Yunseong¹²,Jeon Woojin¹,Cho Yeonchoo¹,Lee Min-Hyun¹,Jeong Seong-Jun¹,Park Jongsun²,Park Seongjun¹

Affiliation:

1. Device Lab., Device & System Research Center, Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea

2. School of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b01734

Reference36 articles.

1. One-Dimensional Electrical Contact to a Two-Dimensional Material

2. Van der Waals heterostructures

3. Graphene-Like Two-Dimensional Materials

4. A role for graphene in silicon-based semiconductor devices

5. Graphene transistors

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