Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS<sub>2</sub>-Reference-Cited by-同舟云学术

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS₂

Published:2022-09-12 Issue:9 Volume:16 Page:14942-14950
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sun Zheng^ORCID,Pang Chin-Sheng^ORCID,Wu Peng^ORCID,Hung Terry Y.T.,Li Ming-Yang,Liew San Lin,Cheng Chao-Ching,Wang Han,Wong H.-S. Philip,Li Lain-Jong,Radu Iuliana,Chen Zhihong,Appenzeller Joerg

Funder

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c05902

Reference54 articles.

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2. High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics

3. High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

4. Sub-10 nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes as an Evaporating Mask

5. Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates

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