In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate-Reference-Cited by-同舟云学术

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In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate

Published:2020-05-07 Issue:6 Volume:14 Page:7389-7397
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Masih Das Paul¹^ORCID,Drndić Marija¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Funder

National Human Genome Research Institute

Division of Emerging Frontiers in Research and Innovation

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c02908

Reference44 articles.

1. Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy

2. Quantifying transmission electron microscopy irradiation effects using two-dimensional materials

3. Pushing the Envelope of In Situ Transmission Electron Microscopy

4. Direct evidence for atomic defects in graphene layers

5. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition

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1. Probing Functional Structures, Defects, and Interfaces of 2D Transition Metal Dichalcogenides by Electron Microscopy;Advanced Functional Materials;2023-10-02

2. The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication;Advanced Materials;2023-08-13

3. An ultrasensitive FET biosensor based on vertically aligned MoS2 nanolayers with abundant surface active sites;Analytica Chimica Acta;2023-04

4. Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS₂ Sputtered Few-Layered Thin Films;ACS Nano;2023-03-23

5. Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging;Microscopy and Microanalysis;2022-10-01

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