Manipulating Edge Current in Hexagonal Boron Nitride via Doping and Friction-Reference-Cited by-同舟云学术

Manipulating Edge Current in Hexagonal Boron Nitride via Doping and Friction

Published:2021-12-08 Issue:12 Volume:15 Page:20203-20213
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Das Bikash¹,Maity Sujan¹,Paul Subrata²,Dolui Kapildeb³,Paramanik Subham¹,Naskar Sanjib⁴,Mohanty Smruti Ranjan²,Chakraborty Supriya⁴,Ghosh Anudeepa¹,Palit Mainak¹,Watanabe Kenji⁵^ORCID,Taniguchi Takashi⁶^ORCID,Menon Krishnakumar S. R.²,Datta Subhadeep¹^ORCID

Affiliation:

1. School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India

2. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700 064, India

3. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, United States

4. Central Scientific Services, Indian Association for the Cultivation of Science, 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India

5. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

6. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Council of Scientific and Industrial Research

Research Grants Council, University Grants Committee

Department of Atomic Energy, Government of India

Ministry of Education, Culture, Sports, Science and Technology

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Japan Society for the Promotion of Science

Technical Research Centre, Indian Association for the Cultivation Of Science, Kolkata

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c08212

Reference46 articles.

1. Insulators for 2D nanoelectronics: the gap to bridge

2. Lattice-Matched Epitaxial Graphene Grown on Boron Nitride

3. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

4. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

5. Tunable metal–insulator transition in double-layer graphene heterostructures

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