Lattice-Matched Epitaxial Graphene Grown on Boron Nitride-Reference-Cited by-同舟云学术

Lattice-Matched Epitaxial Graphene Grown on Boron Nitride

Published:2017-12-12 Issue:1 Volume:18 Page:498-504
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Davies Andrew¹²,Albar Juan D.¹,Summerfield Alex¹,Thomas James C.¹^ORCID,Cheng Tin S.¹,Korolkov Vladimir V.¹,Stapleton Emily¹,Wrigley James¹,Goodey Nathan L.¹,Mellor Christopher J.¹,Khlobystov Andrei N.²^ORCID,Watanabe Kenji³^ORCID,Taniguchi Takashi³,Foxon C. Thomas¹,Eaves Laurence¹,Novikov Sergei V.¹,Beton Peter H.¹^ORCID

Affiliation:

1. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

2. School of Chemistry, University of Nottingham, Nottingham NG7 2RD, United Kingdom

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b04453

Reference40 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Van der Waals heterostructures

3. Moiré superlattice effects in graphene/boron-nitride van der Waals heterostructures

4. Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure

5. Cloning of Dirac fermions in graphene superlattices

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