Universal Map of Gas-Dependent Kinetic Selectivity in Carbon Nanotube Growth-Reference-Cited by-同舟云学术

Universal Map of Gas-Dependent Kinetic Selectivity in Carbon Nanotube Growth

Published:2022-03-22 Issue:4 Volume:16 Page:5627-5635
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Otsuka Keigo¹²^ORCID,Ishimaru Ryoya¹,Kobayashi Akari¹,Inoue Taiki³^ORCID,Xiang Rong¹^ORCID,Chiashi Shohei¹^ORCID,Kato Yuichiro K.²⁴^ORCID,Maruyama Shigeo¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2. Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama 351-0198, Japan

3. Department of Applied Physics, Osaka University, Osaka 565-0871, Japan

4. Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c10569

Reference48 articles.

1. Modern microprocessor built from complementary carbon nanotube transistors

2. Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

3. The road to carbon nanotube transistors

4. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

5. Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

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