Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches-Reference-Cited by-同舟云学术

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Published:2018-07-27 Issue:6400 Volume:361 Page:387-392
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Qiu Chenguang¹^ORCID,Liu Fei²^ORCID,Xu Lin¹^ORCID,Deng Bing³^ORCID,Xiao Mengmeng¹^ORCID,Si Jia¹,Lin Li³,Zhang Zhiyong¹^ORCID,Wang Jian²,Guo Hong⁴,Peng Hailin³^ORCID,Peng Lian-Mao¹^ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.

2. Department of Physics, University of Hong Kong, Hong Kong, China.

3. Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

4. Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada.

Abstract

Cooler electrons for transistors The operating power of field-effect transistors is constrained in part by the minimum change in voltage needed to change the current output. This subthreshold swing (SS) limit is caused by hotter electrons from a thermal electron source leaking over the potential of the gate electrode. Qiu et al. show that graphene can act as a Dirac source that creates a narrower distribution of electron energies. When coupled to a carbon nanotube channel, the decrease in SS would allow the supply voltage to be decreased from 0.7 to 0.5 volts. Science , this issue p. 387

Funder

National Science Foundation of China

MOST

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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