Sub-Band Gap Photodetection from the Titanium Nitride/Germanium Heterostructure-Reference-Cited by-同舟云学术

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Sub-Band Gap Photodetection from the Titanium Nitride/Germanium Heterostructure

Published:2019-05-06 Issue:24 Volume:11 Page:21965-21972
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shinde Satish Laxman¹^ORCID,Ishii Satoshi¹^ORCID,Nagao Tadaaki¹²^ORCID

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. Department of Condensed Matter Physics Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Kao Foundation for Arts and Sciences

Japan Association for Chemical Innovation

JFE 21st Century Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b01372

Reference65 articles.

1. Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices

2. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

3. Near-infrared imaging with quantum-dot-sensitized organic photodiodes

4. High-performance Ge-on-Si photodetectors

5. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

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