Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition-Reference-Cited by-同舟云学术

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Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition

Published:2024-02-23 Issue:9 Volume:16 Page:11758-11766
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kang Seungme¹,Sohn Sunyoung²^ORCID,Kim Hyeran³,Yun Hyung Joong⁴,Jang Byung Chul⁵^ORCID,Yoo Hocheon¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea

2. Department of Semiconductor Energy Engineering, Sangji University, Wonju 26339, Republic of Korea

3. Research Center for Materials Analysis, Korea Basic Science Institute, Daejeon 34133, Republic of Korea

4. Advance Nano Research Group, Korea Basic Science Institute (KBSI), Daejeon 34126, Republic of Korea

5. School of Electronics and Electrical Engineering, Kyungpook National University, Bukgu 41566, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c17855

Reference39 articles.

1. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

2. Flexible metal oxide synaptic transistors using biomass-based hydrogel as gate dielectric

3. Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

4. Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

5. A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode

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1. Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N‐Shape Switching Transistors;Advanced Functional Materials;2024-09-11

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