Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
Author:
Affiliation:
1. Distinguished Member of Technical Staff at AT&T Bell Laboratories, Murray Hill, NJ 07974.
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference51 articles.
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4. Strained-Layer Epitaxy of Germanium-Silicon Alloys
5. CAPASSO, F, ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO, APPLIED PHYSICS LETTERS 40: 38 (1982).
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