Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen-Reference-Cited by-同舟云学术

Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen

Published:2019-10-10 Issue:44 Volume:11 Page:41490-41496
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Haizhong¹^ORCID,Ju Xin¹,Zhou Yu¹,Gu Chenjie²^ORCID,Pan Jisheng³,Ang Diing Shenp¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

2. Division of Microelectronics Science and Engineering, School of Science, Ningbo University, Ningbo 315211, China

3. Institute of Materials Researc h and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634

Funder

Ministry of Education - Singapore

Nanyang Technological University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b11772

Reference33 articles.

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