Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model-Reference-Cited by-同舟云学术

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Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
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Author:

Wei Z.,Takagi T.,Kanzawa Y.,Katoh Y.,Ninomiya T.,Kawai K.,Muraoka S.,Mitani S.,Katayama K.,Fujii S.,Miyanaga R.,Kawashima Y.,Mikawa T.,Shimakawa K.,Aono K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131650.pdf?arnumber=6131650

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