Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties-Reference-Cited by-同舟云学术

Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties

Published:2019-10-25 Issue:46 Volume:11 Page:43480-43487
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Arora Himani¹²^ORCID,Jung Younghun³,Venanzi Tommaso¹²,Watanabe Kenji⁴,Taniguchi Takashi⁴,Hübner René¹,Schneider Harald¹,Helm Manfred¹²,Hone James C.³,Erbe Artur¹

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Saxony, Germany

2. Technische Universität Dresden, 01062 Dresden, Saxony, Germany

3. Department of Mechanical Engineering, Columbia University, 10027 New York, New York, United States

4. National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan

Funder

Helmholtz-Gemeinschaft

Center of Advancing Electronics Dresden, Technische Universit?t Dresden

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b13442

Reference56 articles.

1. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

2. Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

3. Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

4. Performance improvement of multilayer InSe transistors with optimized metal contacts

5. Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique

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