Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation-Reference-Cited by-同舟云学术

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Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation

Published:2023-10-26 Issue:21 Volume:6 Page:20161-20172
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Gutiérrez Yael¹²^ORCID,Dicorato Stefano³,Dilonardo Elena³^ORCID,Palumbo Fabio³^ORCID,Giangregorio Maria M.³,Losurdo Maria¹

Affiliation:

1. Istituto di Chimica della Materia Condensata e delle Tecnologie per l’Energia, ICMATE, CNR, C.so Stati Uniti 4, 35127 Padova, Italy

2. Physics Department, University of Oviedo, 33007 Oviedo, Spain

3. Institute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy

Funder

European Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c03899

Reference70 articles.

1. Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting

2. High performance few-layer GaS photodetector and its unique photo-response in different gas environments

3. Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

4. Ultrathin All-2D Lateral Graphene/GaS/Graphene UV Photodetectors by Direct CVD Growth

5. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

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1. Symmetry-enforced metal-insulator transition and topological adiabatic charge pump in sliding bilayers of threefold symmetric materials;Physical Review B;2024-07-18

2. Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices;ACS Applied Nano Materials;2024-04-24

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