Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography-Reference-Cited by-同舟云学术

Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography

Published:2020-02-05 Issue:8 Volume:12 Page:9881-9889
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bespalov Ivan¹,Zhang Yu¹,Haitjema Jarich¹,Tromp Rudolf M.²³,van der Molen Sense Jan²,Brouwer Albert M.¹⁴^ORCID,Jobst Johannes²,Castellanos Sonia¹^ORCID

Affiliation:

1. Advanced Research Center for Nanolithography, Science Park 104, 1098XG Amsterdam, The Netherlands

2. Kamerlingh Onnes Laboratory, Leiden University, Niels Bohrweg 2, 2333 CA Leiden, The Netherlands

3. IBM T. J. Watson Research Center, 1101 Kitchawan Road, P.O. Box 218, Yorktown Heights, 10598 New York, United States

4. van’t Hoff Institute for Molecular Sciences, University of Amsterdam, P.O. Box 94157, 1090 GD Amsterdam, The Netherlands

Funder

Ministerie van Economische Zaken

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.9b19004

Reference49 articles.

1. Promising Lithography Techniques for Next-Generation Logic Devices

2. Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

3. EUV lithography patterning challenges

4. Extreme ultraviolet resist materials for sub-7 nm patterning

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