Electronic Structure of the CdS/Cu(In,Ga)Se2 Interface of KF- and RbF-Treated Samples by Kelvin Probe and Photoelectron Yield Spectroscopy-Reference-Cited by-同舟云学术

Electronic Structure of the CdS/Cu(In,Ga)Se2 Interface of KF- and RbF-Treated Samples by Kelvin Probe and Photoelectron Yield Spectroscopy

Published:2021-02-02 Issue:6 Volume:13 Page:7745-7755
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Rusu Marin¹^ORCID,Kodalle Tim²^ORCID,Choubrac Leo¹,Barreau Nicolas³,Kaufmann Christian A.²,Schlatmann Rutger²^ORCID,Unold Thomas¹^ORCID

Affiliation:

1. Struktur und Dynamik von Energiematerialien, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

2. PVcomB, Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstr. 3, 12489 Berlin, Germany

3. Université de Nantes, CNRS, Institut des Matériaux Jean Rouxel, IMN, F-44000 Nantes, France

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c20976

Reference76 articles.

1. Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35%

2. Sodium incorporation strategies for CIGS growth at different temperatures

3. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

4. Compositional investigation of potassium doped Cu(In,Ga)Se2solar cells with efficiencies up to 20.8%

5. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

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