Optimizing the Electronic Structure of In2O3 through Mg Doping for NiO/In2O3 p–n Heterojunction Diodes
Author:
Affiliation:
1. Department of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
2. Shenzhen Research Institute of Xiamen University, Shenzhen 518000, P. R. China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Guangdong Province
Shenzhen Science, Technology and Innovation Commission
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c14348
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