Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals via Point Defect Engineering and Sb Doping-Reference-Cited by-同舟云学术

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Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals via Point Defect Engineering and Sb Doping

Published:2020-12-15 Issue:52 Volume:12 Page:57888-57897
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Saito Wataru¹^ORCID,Hayashi Kei¹^ORCID,Huang Zhicheng¹,Dong Jinfeng²,Li Jing-Feng²^ORCID,Miyazaki Yuzuru¹^ORCID

Affiliation:

1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Funder

Tohoku University

Japan Society for the Promotion of Science

Tsinghua University

Sumitomo Metal Mining Co., Ltd

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c17462

Reference40 articles.

1. Electronic and thermal transport properties of Mg2 Sn crystals containing finely dispersed eutectic structures

2. New insight into the material parameter B to understand the enhanced thermoelectric performance of Mg2Sn1−x−yGexSby

3. Significant Roles of Intrinsic Point Defects in Mg2X(X= Si, Ge, Sn) Thermoelectric Materials

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