Significant Roles of Intrinsic Point Defects in Mg2X(X= Si, Ge, Sn) Thermoelectric Materials-Reference-Cited by-同舟云学术

Significant Roles of Intrinsic Point Defects in Mg2X(X= Si, Ge, Sn) Thermoelectric Materials

Published:2015-12-15 Issue:2 Volume:2 Page:1500284
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Liu Xiaohua¹,Xi Lili²,Qiu Wujie²,Yang Jiong³,Zhu Tiejun¹,Zhao Xinbing¹,Zhang Wenqing²³

Affiliation:

1. State Key Laboratory of Silicon Materials; School of Materials Science and Engineering; Zhejiang University; Hangzhou 310027 P. R. China

2. State Key Laboratory of High Performance Ceramics and Superfine Microstructures; Shanghai Institute of Ceramics; Chinese Academy of Science; Shanghai 200050 P. R. China

3. Materials Genome Institute; Shanghai University; Shanghai 200444 P. R. China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201500284/fullpdf

Reference65 articles.

1. Band Engineering of Thermoelectric Materials

2. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

3. Resonant levels in bulk thermoelectric semiconductors

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoelectric properties of binary Mg2Sn and ternary Mg2Sn1−xYx (Y = Si, Ge) with the addition of Cu2S;Journal of Alloys and Compounds;2024-02

2. Response of Mg₂X (X = Si, Ge and Sn) compounds to extreme uniaxial compression: first-principles calculations;Modelling and Simulation in Materials Science and Engineering;2024-01-22

3. Layered 2D MoSe_2(1–x)Te_2x Alloys: Promising Thermoelectric Material with Tunable Thermal and Electrical Transport;The Journal of Physical Chemistry C;2024-01-18

4. Enhanced Thermoelectric Performance of Mg–Sn Thin Films: Role of Mg₉Sn₅ Phase and One-Dimensional Electronic Structure;ACS Applied Materials & Interfaces;2024-01-09

5. Influence of Ge to the formation of defects in epitaxial Mg₂Sn_1−xGe_x thermoelectric thin films;Japanese Journal of Applied Physics;2024-01-05