Surface chemical states and structures of epitaxial Mg2Sn thermoelectric thin films

Abstract

Abstract Evaluation of the surface chemical states and structures of thermoelectric thin films is vital for the successful fabrication and operation of microscale thermoelectric devices incorporating such films. The chemical states and structures present in the surface layers of epitaxially grown Mg2Sn thermoelectric thin films were evaluated by Auger electron spectroscopy and reflection high-energy electron diffraction measurements. An oxide layer about 5 Å thick was shown to form on the surface of epitaxially grown Mg2Sn thermoelectric thin films on exposure to air, giving meaningful insights into potential ways of improving the microfabrication of thin-film-based miniaturized thermoelectric devices.