Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures
Author:
Affiliation:
1. Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States
2. Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU, U.K.
Funder
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c09635
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