Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm-Reference-Cited by-同舟云学术

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Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm

Published:2020-07-02 Issue:29 Volume:12 Page:32943-32950
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zou Xiao¹^ORCID,Liu Lu²,Xu Jingping²,Wang Hongjiu¹,Tang Wing-Man³

Affiliation:

1. Department of Electromachine Engineering, Jianghan University, Wuhan 430056, People’s Republic of China

2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

Funder

Research Grants Council, University Grants Committee

National Natural Science Foundation of China

Hong Kong Polytechnic University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c09060

Reference34 articles.

1. Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

2. MoS 2 transistors with 1-nanometer gate lengths

3. Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

4. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

5. Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

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1. Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction;Scientific Reports;2024-09-13

2. Low-Frequency Noise in High-Current MoS₂ Vertical Field-Effect Transistors with Nanoscale Channel;ACS Applied Nano Materials;2024-08-28

3. Gate Modulation of Barrier Height of Unipolar Vertically Stacked Monolayer ReS2 / MoS2 Heterojunction.;2024-08-14

4. Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit;Advanced Functional Materials;2024-04-12

5. Nanoscale Channel Length MoS₂ Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes;ACS Applied Materials & Interfaces;2024-03-21

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