Low-Frequency Noise in High-Current MoS2 Vertical Field-Effect Transistors with Nanoscale Channel

Author:

Wan Da1ORCID,Lu Li1,Xie Zhengdao2,Li Chenfei1,Jiang Weijie1,Wang Wenzhao1,Huang Hao3ORCID,Li Guoli2,Abliz Ablat4,Wang Jingli5,Liu Xingqiang2ORCID,Liao Lei2ORCID

Affiliation:

1. School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China

2. State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China

3. State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China

4. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China

5. State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China

Funder

National Key Research and Development Program of China

China National Funds for Distinguished Young Scientists

Shanghai Science and Technology Development Foundation

National Natural Science Foundation of China

Tianshan Talent Innovation and Technology Cultivation Project Foundation of Xinjiang Uygur Autonomous Region

Publisher

American Chemical Society (ACS)

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