Defect Annihilation in the Directed Self-Assembly of Block Copolymers in Films with Increasing Thickness-Reference-Cited by-同舟云学术

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Defect Annihilation in the Directed Self-Assembly of Block Copolymers in Films with Increasing Thickness

Published:2019-10-10 Issue:20 Volume:52 Page:7798-7805
ISSN:0024-9297
Container-title:Macromolecules
language:en
Short-container-title:Macromolecules

Author:

Chen Xuanxuan¹²^ORCID,Delgadillo Paulina R.²³,Jiang Zhang⁴,Craig Gordon S. W.²,Gronheid Roel³,Nealey Paul F.²⁵^ORCID

Affiliation:

1. Intel Corporation, 2501 NE Century Boulevard, Hillsboro, Oregon 97124, United States

2. Institute for Molecular Engineering, University of Chicago, 5640 S Ellis Avenue, Chicago, Illinois 60637, United States

3. Imec, Kapeldreef 75, Leuven B-3001, Belgium

4. X-ray Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, United States

5. Material Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Inorganic Chemistry,Polymers and Plastics,Organic Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.macromol.9b01030

Reference42 articles.

1. Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

2. Tsai, H.; Miyazoe, H.; Vora, A.; Magbitang, T.; Arellano, N.; Liu, C.C.; Maher, M. J.; Durand, W. J.; Dawes, S. J.; Bucchignano, J. J.; High Chi Block Copolymer DSA to Improve Pattern Quality for FinFET Device Fabrication. Advances in Patterning Materials and Processes XXXIII; Proceedings of SPIE, 2016; pp 977910–977911.

3. Rectangular Patterns Using Block Copolymer Directed Assembly for High Bit Aspect Ratio Patterned Media

4. Bit Patterned Media at 1 Tdot/in2 and Beyond

5. Bao, X.Y.; Yi, H.; Bencher, C.; Chang, L.; Dai, H.; Chen, Y.; Chen, P. J.; Wong, H. P., SRAM, NAND, DRAM Contact Hole Patterning Using Block Copolymer Directed Self-Assembly Guided by Small Topographical Templates. IEEE International Electron Devices Meeting, 2011; pp 7.7.1–7.7.4.

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1. Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography;ACS Macro Letters;2024-07-15

2. Role of Bottlebrush Additives on the Structure of Block Copolymers in the Bulk and Thin Films;Macromolecules;2024-07-09

3. Functional soft materials from blue phase liquid crystals;Science Advances;2023-07-28

4. Recent progress in non-photolithographic patterning of polymer thin films;Progress in Polymer Science;2023-07

5. Enhanced etching resolution of self-assembled PS-b-PMMA block copolymer films by ionic liquid additives;Nanotechnology;2023-03-06

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