Low-Pressure Chemical Vapor Deposition of In2O3 Films on Off-Axis c-Sapphire Substrates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Funder
Air Force Office of Scientific Research
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01924
Reference45 articles.
1. Phase stability, electronic structure, and optical properties of indium oxide polytypes
2. Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy
3. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3
4. Ab initiomodeling of diffusion in indium oxide
5. Thermodynamic stability, stoichiometry, and electronic structure of bcc-In2O3surfaces
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3. Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water;Dalton Transactions;2022
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