Thermal atomic layer deposition of In<sub>2</sub>O<sub>3</sub> thin films using a homoleptic indium triazenide precursor and water-Reference-Cited by-同舟云学术

Thermal atomic layer deposition of In₂O₃ thin films using a homoleptic indium triazenide precursor and water

Published:2022 Issue:12 Volume:51 Page:4712-4719
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Mpofu Pamburayi¹^ORCID,Rouf Polla¹^ORCID,O'Brien Nathan J.¹^ORCID,Forsberg Urban¹^ORCID,Pedersen Henrik¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

Abstract

In2O3 thin films are deposited using thermal atomic layer deposition with an indium(iii) triazenide precursor and water. The films and deposition process are on par with the previously reported indium(iii) formamidinate.

Funder

Swedish Institute

Stiftelsen för Strategisk Forskning

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D1DT03748J

Reference46 articles.

1. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

2. Influence of annealing temperature on structural properties of ITO thin-films on graphite substrate

3. Electrical and optical properties of reactively evaporated indium tin oxide (ITO) films-dependence on substrate temperature and tin concentration

4. Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectrocatalytic efficiency of In2S3–In2O3 films as photoelectrodes/photocatalyst in hydrogen production reaction;Journal of Physics and Chemistry of Solids;2024-10

2. Tailoring indium oxide film characteristics through oxygen reactants in atomic layer deposition with highly reactive liquid precursor;Applied Surface Science;2024-08

3. Atomic Layer Deposition of WO₃-Doped In₂O₃ for Reliable and Scalable BEOL-Compatible Transistors;Nano Letters;2024-04-30

4. Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices;Chemistry of Materials;2024-02-26

5. High-performance ammonia gas sensor based on spray pyrolysis developed In₂O₃:La films;Physica Scripta;2024-02-01