Mist Chemical Vapor Deposition Growth of α‐In 2 O 3 Films Using Indium Oxide Powder as Source Precursor-Reference-Cited by-同舟云学术

Mist Chemical Vapor Deposition Growth of α‐In 2 O 3 Films Using Indium Oxide Powder as Source Precursor

Published:2021-11-02 Issue: Volume: Page:2100414
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Taguchi Akito¹^ORCID,Takahashi Subaru¹,Sekiguchi Atsushi²,Kaneko Kentaro³^ORCID,Fujita Shizuo⁴^ORCID,Onuma Takeyoshi¹⁵^ORCID,Honda Tohru¹⁵,Yamaguchi Tomohiro¹⁵^ORCID

Affiliation:

1. Department of Electrical Engineering and Electronics Graduate School of Engineering Kogakuin University Hachioji Tokyo 192-0015 Japan

2. Education Support Functions Kogakuin University Hachioji Tokyo 192-0015 Japan

3. Engineering Education Research Center Kyoto University Kyoto 615-8530 Japan

4. Office of Society-Academia Collaboration for Innovation Kyoto University Kyoto 606-8501 Japan

5. Department of Applied Physics School of Advanced Engineering Kogakuin University Hachioji Tokyo 192-0015 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100414

Reference11 articles.

1. Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application

2. Amorphous and crystalline In2O3-based transparent conducting films for photovoltaics

3. Applications and Processing of Transparent Conducting Oxides

4. Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers

5. Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors

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