Control of Crystal Morphologies and Interface Structures of AlN Grown on Sapphire by Elementary Source Vapor Phase Epitaxy
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b00979
Reference26 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Ultraviolet light-emitting diodes based on group three nitrides
3. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
4. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
5. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Development of a New Solution Growth Method for AlN Single Crystals Using Type 430 Ferritic Stainless Steel Flux;Crystal Growth & Design;2024-06-13
2. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01
3. Effect of flux rate on the growth of AlN films on sapphire by MNVPE;Materials Science in Semiconductor Processing;2023-12
4. High-quality AlN growth: a detailed study on ammonia flow;Journal of Materials Science: Materials in Electronics;2023-01-25
5. Simulation and Growth Study of Flux Rate Effects on Mnvpe Grown Aln;2023
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3