High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperlektronik, Hausvogteiplatz 5−7, 10117 Berlin, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b00690
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5. Adatom diffusion at GaN (0001) and (0001̄) surfaces
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