The energetics of the GaN MBE reaction: a case study of meta-stable growth-Reference-Cited by-同舟云学术

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The energetics of the GaN MBE reaction: a case study of meta-stable growth

Published:1997-06 Issue:1-2 Volume:178 Page:102-112
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Newman N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference59 articles.

1. Materials Fundamentals of Molecular Beam Epitaxy;Tsao,1993

2. Thin-Film Processes;Vossen,1978

3. Thin-Film Processes II;Vossen,1991

4. Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films

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4. Can we always control the thickness layer in the MBE method with atomic precision? Analysis of the problem on the MQWs GaN/AlN example;Japanese Journal of Applied Physics;2019-04-08

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