Effect of Radius on Crystal Structure Selection in III–V Nanowire Growth-Reference-Cited by-同舟云学术

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Effect of Radius on Crystal Structure Selection in III–V Nanowire Growth

Published:2020-06-24 Issue:8 Volume:20 Page:5373-5379
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Mårtensson Erik K.¹²^ORCID,Lehmann Sebastian¹²^ORCID,Dick Kimberly A.³²^ORCID,Johansson Jonas¹²^ORCID

Affiliation:

1. Division of Solid State Physics, Lund University, Box 118, 221 00 Lund, Sweden

2. NanoLund, Lund University, Box 118, 221 00 Lund, Sweden

3. Centre for Analysis and Synthesis and National Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100, Lund, Sweden

Funder

Vetenskapsr?det

Knut och Alice Wallenbergs Stiftelse

NanoLund

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c00575

Reference31 articles.

1. Parallel-Coupled Quantum Dots in InAs Nanowires

2. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires

3. Dislocation-free axial InAs-on-GaAs nanowires on silicon

4. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

5. Fundamental aspects of VLS growth

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs–InP Superlattice Nanowires with Tunable Phonon Frequencies;Advanced Physics Research;2024-03-27

2. Effects of the Growth Facet Shape of Self‐Catalyzed GaAs Nanowires on the Zinc‐Blende–Wurtzite Switching;physica status solidi (b);2024-01-26

3. Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials;AIP Advances;2023-02-01

4. Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires;Nanoscale Advances;2023

5. In situ observations of size effects in GaAs nanowire growth;Nanoscale Horizons;2023

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