Valence Band Modification of a (GaxIn1–x)2O3 Solid Solution System Fabricated by Combinatorial Synthesis-Reference-Cited by-同舟云学术

Valence Band Modification of a (GaxIn1–x)2O3 Solid Solution System Fabricated by Combinatorial Synthesis

Published:2020-07-13 Issue:9 Volume:22 Page:433-439
ISSN:2156-8952
Container-title:ACS Combinatorial Science
language:en
Short-container-title:ACS Comb. Sci.

Author:

Nagata Takahiro¹^ORCID,Hoga Takeshi¹²,Yamashita Akihiro³⁴,Asahi Toru³,Yagyu Shinjiro¹,Chikyow Toyohiro⁴

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan

2. Department of Creative Engineering, National Institute of Technology, Tsuruoka College, 104 Sawada, Inooka, Tsuruoka, Yamagata 997-8511, Japan

3. Graduate School of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169−8555, Japan

4. Materials Data & Integrated System (MaDIS), NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

American Chemical Society (ACS)

Subject

General Chemistry,General Medicine

Link

https://pubs.acs.org/doi/pdf/10.1021/acscombsci.0c00033

Reference50 articles.

1. Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation

2. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3

3. On the nature and temperature dependence of the fundamental band gap of In2O3

4. Schottky contacts to In2O3

5. pn-Heterojunction Diodes with n-Type In2O3

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Copper‐Doped In_xGa_2−xO₃ Nanocrystals as Efficient Hole Transport Materials of Perovskite Solar Cells by Regulating Energy Levels;Solar RRL;2023-05-24

2. The electrical conductivity of cubic (In_1−xGa_x)₂O₃ films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer;Japanese Journal of Applied Physics;2022-03-16

3. Molecular beam epitaxy of single-crystalline bixbyite (In1−xGax)2O3 films ( x≤0.18 ): Structural properties and consequences of compositional inhomogeneity;Physical Review Materials;2022-03-14

4. Direct feature extraction from two-dimensional X-ray diffraction images of semiconductor thin films for fabrication analysis;Science and Technology of Advanced Materials: Methods;2022-03-01

5. Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition;Japanese Journal of Applied Physics;2021-12-27