pn-Heterojunction Diodes with n-Type In2O3
Author:
Affiliation:
1. Universität Leipzig; Institut für Experimentelle Physik II; Linnéstraße 5 04103 Leipzig Germany
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201400026/fullpdf
Reference38 articles.
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4. Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO
5. Limits to doping in oxides
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