Abstract
Abstract
We studied the phase diagram of (In
x
Ga1−x
)2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In
x
Ga1−x
)2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In
x
Ga1−x
)2O3 for x ≤ 0.186, hexagonal (hex)-(In
x
Ga1−x
)2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In
x
Ga1−x
)2O3 for x ≥ 0.772. The optical bandgap of (In
x
Ga1−x
)2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17 eV (hex-InGaO3) to 5.00 eV (κ-Ga2O3). Moreover, hex-(In
x
Ga1−x
)2O3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4×10‒1 Ω·cm). Furthermore, hex-(In
x
Ga1−x
)2O3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In
x
Ga1−x
)2O3 can be used in transparent conductive films for deep-ultraviolet LEDs.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
6 articles.
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