Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence-Reference-Cited by-同舟云学术

Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence

Published:2012-01-31 Issue:2 Volume:12 Page:915-920
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Carnevale Santino D.¹,Kent Thomas F.¹,Phillips Patrick J.¹,Mills Michael J.¹,Rajan Siddharth¹,Myers Roberto C.¹

Affiliation:

1. Department of Materials Science and Engineering and ‡Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl203982p

Reference27 articles.

1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2. Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

3. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

4. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

5. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

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