Controllable One-Pot Growth of MoSe<sub>2</sub>/WSe<sub>2</sub> Lateral and Vertical Heterostructures by Facile Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Controllable One-Pot Growth of MoSe₂/WSe₂ Lateral and Vertical Heterostructures by Facile Chemical Vapor Deposition

Published:2023-10-09 Issue:10 Volume:5 Page:5494-5502
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liu Xingyu¹,Wu Qianqian¹,Dai Mengde¹,Xu Qilei¹,Zhang Xiumei²,Cai Zhengyang¹^ORCID,Ostrikov Kostya Ken³^ORCID,Gu Xiaofeng¹^ORCID,Nan Haiyan¹^ORCID,Xiao Shaoqing¹^ORCID

Affiliation:

1. Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China

2. School of Science, Jiangnan University, Wuxi 214122, China

3. School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments, Queensland University of Technology, Brisbane, QLD 4000, Australia

Funder

Jiangsu Province Postdoctoral Science Foundation

Graduate Research and Innovation Projects of Jiangsu Province

China Postdoctoral Science Foundation

Natural Science Foundation of Jiangsu Province

Australian Research Council

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials