Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films-Reference-Cited by-同舟云学术

Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films

Published:2017-06-13 Issue:25 Volume:9 Page:21328-21337
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sanctis Shawn¹,Koslowski Nico¹,Hoffmann Rudolf¹,Guhl Conrad²,Erdem Emre³,Weber Stefan³,Schneider Jörg J.¹^ORCID

Affiliation:

1. Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany

2. Fachgebiet Surface Science, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, 64287 Darmstadt, Germany

3. Institute of Physical Chemistry, Universität Freiburg, Albert Straße 21, 79104 Freiburg, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b06203

Reference57 articles.

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4. High-Performance, Spin-Coated Zinc Tin Oxide Thin-Film Transistors

5. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

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