Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors-Reference-Cited by-同舟云学术

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Published:2018-02-26 Issue:31 Volume:10 Page:25866-25870
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Hong-Chih¹,Chang Ting-Chang^ORCID,Lai Wei-Chih¹,Chen Guan-Fu,Chen Bo-Wei,Hung Yu-Ju,Chang Kuo-Jui²,Cheng Kai-Chung²,Huang Chen-Shuo²,Chen Kuo-Kuang²,Lu Hsueh-Hsing²,Lin Yu-Hsin²

Affiliation:

1. Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan R. O. C.

2. New Display Process Research Division, AU Optronics Corporation, Hsinchu 300, Taiwan R. O. C.

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b16307

Reference20 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

5. Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

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