Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
Author:
Affiliation:
1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b22569
Reference70 articles.
1. Self-powered high performance photodetectors based on CdSe nanobelt/graphene Schottky junctions
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4. Nanostructured materials for photon detection
5. MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors
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