MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors-Reference-Cited by-同舟云学术

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors

Published:2015-03-30 Issue:19 Volume:25 Page:2910-2919
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wang Liu¹,Jie Jiansheng¹,Shao Zhibin¹,Zhang Qing¹,Zhang Xiaohong¹,Wang Yuming¹,Sun Zheng¹,Lee Shuit-Tong¹

Affiliation:

1. Institute of Functional Nano and Soft Materials (FUNSOM); Collaborative Innovation Center of Suzhou Nano Science and Technology; Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices; Soochow University; Suzhou Jiangsu 215123 P. R. China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201500216/fullpdf

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