High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors
Author:
Affiliation:
1. School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b14143
Reference48 articles.
1. Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors
2. The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors
3. Flexible a-IGZO Phototransistor for Instantaneous and Cumulative UV-Exposure Monitoring for Skin Health
4. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
5. Solution-processed metal oxide arrays using femtosecond laser ablation and annealing for thin-film transistors
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