The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Published:2018-01-24 Issue:6 Volume:215 Page:1700785
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Fu Ruofan¹,Yang Jianwen¹,Chang Wei-Chiao²,Chang Wei-Cheng²,Chang Chien-Min²,Lin Dong¹,Zhang Qun¹^ORCID,Liu Po-Tsun²,Shieh Han-Ping D.²

Affiliation:

1. Department of Materials Science; National Engineering Laboratory for TFT-LCD Materials and Technologies; Fudan University; Shanghai 200433 China

2. Department of Photonics and Institute of Electro-Optical Engineering; National Chiao Tung University; Hsin-Chu 30010 Taiwan

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Amorphous IZO-based transparent thin film transistors

3. Flexible a-IZO thin film transistors fabricated by solution processes

4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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