Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Author:

Choi Hyung-Jin1,Jang Jinhyuk2,Jung Soo Young13,Ning Ruiguang14,Kim Min-Seok15,Jung Sung-Jin1,Lee Jun Young1,Park Jin Soo67,Lee Byung Chul689ORCID,Jang Ji-Soo1,Kim Seong Keun110ORCID,Lee Kyu Hyoung1112ORCID,Lee June Hyuk13,Won Sung Ok14,Li Yulan15ORCID,Hu Shenyang15ORCID,Choi Si-Young2ORCID,Baek Seung-Hyub141112ORCID

Affiliation:

1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

3. Department of Materials Science and Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea

4. Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, South Korea

5. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea

6. Bionics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

7. Department of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea

8. Division of Bio-Medical Science & Technology, University of Science and Technology (UST), Seoul, 02792, Republic of Korea

9. KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul, 02447, Republic of Korea

10. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea

11. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea

12. Yonsei-KIST Convergence Research Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

13. Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon, 34057, Republic of Korea

14. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea

15. Pacific Northwest National Laboratory, 902 Battelle Blvd., Richland, WA 99354, USA

Abstract

A rapid heating rate (∼110 °C s−1) allows strain energy to maximally build up in the YSZ layer at the annealing temperature, and the defects are effectively annihilated during annealing.

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Korea Basic Science Institute

Pohang University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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